Datenblatt-Suchmaschine für elektronische Bauteile |
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4AM13 Datenblatt(PDF) 1 Page - Hitachi Semiconductor |
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4AM13 Datenblatt(HTML) 1 Page - Hitachi Semiconductor |
1 / 10 page 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver |
Ähnliche Teilenummer - 4AM13 |
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Ähnliche Beschreibung - 4AM13 |
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