Datenblatt-Suchmaschine für elektronische Bauteile |
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1SV331 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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1SV331 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 1SV331 2000-09-11 2/3 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 µA 10 V Reverse current IR VR = 10 V 3 nA C1V VR = 1 V, f = 1 MHz 17 18 19 Capacitance C4V VR = 4 V, f = 1 MHz 4.25 4.8 5.43 pF Capacitance ratio C1V/C4V 3.5 3.75 Series resistance rs VR = 1 V, f = 470 MHz 0.45 0.7 Ω Marking V 9 |
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