Datenblatt-Suchmaschine für elektronische Bauteile |
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BTB1386M3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1386M3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 1/5 BTB1386M3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features • Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Complementary to BTD2098M3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V IC -5 Collector Current ICP -10 (Note 1) A Pd 0.5 Power Dissipation Pd 2 (Note 2) W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1 . Single Pulse Pw=10ms 2. When mounted on a 40 ×40 ×0.7 mm ceramic board. BTB1386M3 SOT-89 B:Base C:Collector E:Emitter B C E |
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