STP4A60S datasheet(3/5 Pages) SEMIWELL

Teilenummer	STP4A60S

Bauteilbeschribung	Sensitive Gate Triacs

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Hersteller	SEMIWELL [SemiWell Semiconductor]

Direct Link	http://www.semiwellsemi.co.kr

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3 / 5 page

-50

0

50

100

150

10

1

10

2

10

3

V

+

GT3

V

+

GT1

V

-

GT1

V

-

GT3

Junction Temperature [

oC]

10

0

10

1

10

2

10

3

10

-1

10

0

10

1

V

GD(0.2V)

25 ℃

I+

GT3

25 ℃

I+

GT1

I -

GT1

I -

GT3

P

G(AV) (0.1W)

P

GM (1.5W)

V

GM (7V)

Gate Current [mA]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

95

100

105

110

115

120

125

130

θ = 90

o

θ = 150

o

θ = 60

o

θ = 30

o

θ = 180

o

θ = 120

o

RMS On-State Current [A]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

θ = 90

o

θ = 150

o

θ = 60

o

θ = 30

o

θ = 180

o

θ = 120

o

RMS On-State Current [A]

10

0

10

1

10

2

0

5

10

15

20

25

30

35

60Hz

50Hz

Time (cycles)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

10

-1

10

0

10

1

10

2

125

oC

25

oC

On-State Voltage [V]

STP4A60S

3/5

Fig 1. Gate Characteristics

Fig 2. On-State Voltage

Fig 3. On State Current vs.

Maximum Power Dissipation

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 5. Surge On-State Current Rating

( Non-Repetitive )

Fig 6. Gate Trigger Voltage vs.

Junction Temperature

θ

2

π

360°

π

θ : Conduction Angle

θ

2

π

360°

π

θ : Conduction Angle

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