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SI6866DQ Datenblatt(PDF) 3 Page - Vaishali Semiconductor |
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SI6866DQ Datenblatt(HTML) 3 Page - Vaishali Semiconductor |
3 / 5 page Si6866DQ Vishay Siliconix Document Number: 71102 S-50695—Rev. B, 18-Apr-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 400 800 1200 1600 04 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0.0 0.9 1.8 2.7 3.6 4.5 0369 12 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 5.8 A ID − Drain Current (A) VGS = 4.5 V ID = 5.8 A VGS = 2.5 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 02468 TJ = 150_C TJ = 25_C ID = 5.8 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V |
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