Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

ES29DS160ET-80TG Datenblatt(PDF) 9 Page - Excel Semiconductor Inc.

Teilenummer ES29DS160ET-80TG
Bauteilbeschribung  16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  EXCELSEMI [Excel Semiconductor Inc.]
Direct Link  
Logo EXCELSEMI - Excel Semiconductor Inc.

ES29DS160ET-80TG Datenblatt(HTML) 9 Page - Excel Semiconductor Inc.

Back Button ES29DS160ET-80TG Datasheet HTML 5Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 6Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 7Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 8Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 9Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 10Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 11Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 12Page - Excel Semiconductor Inc. ES29DS160ET-80TG Datasheet HTML 13Page - Excel Semiconductor Inc. Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 54 page
background image
ES I
ES I
9
Rev. 1C Jan 5 , 2006
ES29LV160D
Excel Semiconductor inc.
In-System Unprotection
“In-system
unprotection”,
the
primary
method,
requires VID (11.5V~12.5V) on the RESET# with
A6=1, A1=1, and A0=0. This method can be imple-
mented either in-system or via programming equip-
ment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 3 for the unprotection algorithm.
A9 High-Voltage Unprotection
“High-voltage unprotection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and con-
trol pin OE# with A6=1, A1=1 and A0=0. Refer to
Fig. 29 for timing diagram and Fig. 5 for the unpro-
tection algorithm.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
the RESET# pin to VID (11.5V-12.5V). During this
mode, formerly protected sectors can be pro-
grammed
or
erased
by
selecting
the
sector
addresses. Once VID is removed from the RESET#
pin, all the previously protected sectors are pro-
tected again. Fig. 1 shows the algorithm, and Fig. 25
shows the timing diagrams for this feature.
HARDWARE DATA PROTECTION
The ES29LV160 device provides some protection
measures against accidental erasure or program-
ming caused by spurious system level signals that
may exist during power transition. During power-up,
all internal registers and latches in the device are
cleared and the device automatically resets to the
read mode. In addition, with its internal state
machine built-in the device, any alteration of the
memory contents or any initiation of new operation-
can only occur after successful completion of spe-
cific command sequences. And several features are
incorporated to prevent inadvertent write cycles
resulting from Vcc power-up and power-down transi-
tion or system noise.
Low Vcc Write inhibit
When Vcc is less than VLKO, the device does not
accept any write cycles. This protects data during
Vcc power-up and power-down.
The command register and all internal program/
erase circuits are disabled, and the device resets to
the read mode. Subsequent writes are ignored until
Vcc is greater than VLKO. The system must provide
proper signals to the control pins to prevent unin-
tentional writes when Vcc is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical inhibit
Write cycles are inhibited by holding any one of
OE#=VIL, CE#=VIH or WE#=VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
Power-up Write Inhibit
If WE#=CE#=VIL and OE#=VIH during power up,
the device does not accept any commands on the
rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
Notes:
1. All protected sectors are unprotected .
2. All previously protected sectors are protected once again.
Figure 1. Temporary Sector Unprotect
Operation
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)


Ähnliche Teilenummer - ES29DS160ET-80TG

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Excel Semiconductor Inc...
ES29DS160ET-70WC EXCELSEMI-ES29DS160ET-70WC Datasheet
700Kb / 53P
   16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-90RTGI EXCELSEMI-ES29DS160ET-90RTGI Datasheet
679Kb / 51P
   4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-90TGI EXCELSEMI-ES29DS160ET-90TGI Datasheet
700Kb / 53P
   16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
More results

Ähnliche Beschreibung - ES29DS160ET-80TG

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Excel Semiconductor Inc...
ES29LV160E EXCELSEMI-ES29LV160E Datasheet
700Kb / 53P
   16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
logo
AMIC Technology
A29L160 AMICC-A29L160_07 Datasheet
531Kb / 42P
   2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
A29L160 AMICC-A29L160 Datasheet
556Kb / 45P
   2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
logo
Austin Semiconductor
AS29LV016J AUSTIN-AS29LV016J Datasheet
420Kb / 40P
   16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory
AS29LV016 AUSTIN-AS29LV016 Datasheet
414Kb / 40P
   16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory
logo
AMIC Technology
A29L008 AMICC-A29L008 Datasheet
335Kb / 36P
   1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
logo
Excel Semiconductor Inc...
ES29LV320D EXCELSEMI-ES29LV320D Datasheet
583Kb / 59P
   32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
logo
AMIC Technology
A29L008A AMICC-A29L008A Datasheet
462Kb / 34P
   1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
logo
Excel Semiconductor Inc...
ES29LV320E EXCELSEMI-ES29LV320E Datasheet
745Kb / 58P
   32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29LV800D EXCELSEMI-ES29LV800D Datasheet
679Kb / 50P
   8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com