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ES29F160F-70WCI Datenblatt(PDF) 7 Page - Excel Semiconductor Inc. |
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ES29F160F-70WCI Datenblatt(HTML) 7 Page - Excel Semiconductor Inc. |
7 / 58 page ES I ES I 7 Rev. 0A May 25, 2006 ES29LV320E Excel Semiconductor inc. The device enters the CMOS standby mode when CE# and RESET# pins are both held at Vcc+0.3V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within Vcc+0.3V, the device will be still in the standby mode, but the standby current will be greater than the CMOS standby current (0.2uA typi- cally). When the device is in the standby mode, only standard access time (tCE) is required for read access, before it is ready for read data. And even if the device is deselected by CE# pin during erase or programming operation, the device draws active cur- rent until the operation is completely done. While the device stays in the standby mode, the output is placed in the high impedance state, independent of the OE# input. The device can enter the deep power-down mode where current consumption is greatly reduced down to less than 15uA typically by the following three ways: - CMOS standby ( CE#, RESET# = Vcc + 0.3V ) - During the device reset ( RESET# = Vss + 0.3V ) - In Autosleep Mode ( after tACC + 30ns ) Refer to the CMOS DC characteristics Table11 for further current specification. Autosleep Mode The device automatically enters a deep power-down mode called the autosleep mode when addresses remain stable for tACC+30ns. In this mode, current consumption is greatly reduced ( less than 15uA typ- ical ), regardless of CE#, WE# and OE# control sig- nals. Writing Commands To write a command or command sequences to ini- tiate some operations such as program or erase, the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin deter- mines whether the device accepts program data in bytes or words. Refer to “BYTE# timings for Write Operations” in the Fig. 21 for more information. Unlock Bypass Mode To reduce more the programming time, an unlock- bypass mode is provided. Once the device enters this mode, only two write cycles are required to ini- tiate the programming operation instead of four cycles in the normal program command sequences which are composed of two unlock cycles, program set-up cycle and the last cycle with the program data and addresses. In this mode, two unlock cycles are saved ( or bypassed ). Sector Addresses The entire memory space of cell array is divided into a many of small sectors: 8kbytes x 8 boot sec- tors and 64Kbytes x 63 main sectors. In erase operation, a single sector, multiple sectors, or the entire device (chip erase) can be selected for erase. The address space that each sector occu- pies is shown in detail in the Table 3-4. Accelerated Program Mode The device offers accelerated program operations through the ACC function. This is one of two func- tions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH (11.5V~12.5V) on this pin, the device automatically enters the previously mentioned Unlock Bypass mode, temporarily unprotects any protected sec- tors, and uses the higher voltage on the pin to reduce the time required for program operations. Only two-cycle program command sequences are required because the unlock bypass mode is auto- matically activated in this acceleration mode. The device returns to the normal operation when VHH is removed from the WP#/ACC pin. It should be noted that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. In addition, the WP#/ ACC pin must not be left floating or unconnected; inconsistent or undesired behavior of the device may result. Autoselect Mode Flash memories are intended for use in applica- tions where the local CPU alters memory contents. In such applications, manufacturer and device identification (ID) codes must be accessible while the device resides in the target system ( the so called “in-system program”). On the other hand, signature codes have been typically accessed by raising A9 pin to a high voltage in PROM program- mers. However, multiplexing high voltage onto address lines is not the generally desired system design practice. Therefore, in the ES29LV320 device an autoselect command is provided to allow the system to access the signature codes without any high voltage. The conventional A9 high-voltage method used in the PROM program- ers for signature codes are still supported in this device. |
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Ähnliche Beschreibung - ES29F160F-70WCI |
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