Datenblatt-Suchmaschine für elektronische Bauteile |
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STG8209 Datenblatt(PDF) 3 Page - SamHop Microelectronics Corp. |
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STG8209 Datenblatt(HTML) 3 Page - SamHop Microelectronics Corp. |
3 / 8 page Parameter S ymbol Condition Min Typ Max Unit E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS Diode Forward Voltage VSD VGS = 0 V, Is = 1.7A 1.2 V b Notes c.Guaranteed by design, not subject to production testing. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and Temperature ID, Drain C urrent (A) V GS , G ate-to-S ource Voltage (V ) 3 S TG 8209 60 50 40 30 20 10 0 15 12 9 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25 125 0.8 T j( C ) 100 50 75 T j, J unction T emperature ( C ) F igure 1. Output C haracteristics V DS , Drain-to-S ource Voltage (V ) 15 12 9 6 3 0 0 0.5 1 1.5 2 2.5 3 V GS =1.5V V GS =4V V GS =2.5V F igure 3. On-R esistance vs. Drain C urrent and G ate V oltage 3 6 9 12 15 1 V GS =2.5V V GS =4V 3 T j=125 C V GS =2V 150 a.Surface Mounted on FR4 Board, t <=10sec. 25 C V GS =4V ID=5A V GS =2.5V ID=3A 0 0.8 1.8 1.6 1.4 1.2 1.0 -55 C |
Ähnliche Teilenummer - STG8209 |
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Ähnliche Beschreibung - STG8209 |
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