BC847BLP datasheet(2/4 Pages) DIODES

Teilenummer	BC847BLP

Bauteilbeschribung	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Hersteller	DIODES [Diodes Incorporated]

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DS30525 Rev. 7 - 2

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BC847BLP

www.diodes.com

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

(Note 3)

V(BR)CBO

50

—

V

IC = 10

mA, IB = 0

Collector-Emitter Breakdown Voltage

(Note 3)

V(BR)CEO

45

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

(Note 3)

V(BR)EBO

6—

—

V

IE = 1

mA, IC = 0

DC Current Gain

(Note 3)

hFE

200

350

450

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage

(Note 3)

VCE(SAT)

—

80

200

250

600

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage

(Note 3)

VBE(SAT)

—

700

900

—mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage

(Note 3)

VBE(ON)

580

—

640

725

700

770

mV

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Emitter Cutoff Current

(Note 3)

ICBO

——

15

5.0

nA

µA

VCB = 30V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

3.0

—

pF

VCB = 10V, f = 1.0MHz

0

150

100

50

200

250

300

350

1

100

10

I , COLLECTOR CURRENT (mA)

Fig. 2 Typical Collector-Emitter Saturation

Voltage vs. Collector Current

C

T = 150ºC

A

T = -55ºC

A

T = 25ºC

A

T = 125ºC

A

T = 85ºC

A

Ic/Ib=20

0

50

100

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

A

150

200

250

300

Note:

3. Short duration pulse test used to minimize self-heating effect.

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