Datenblatt-Suchmaschine für elektronische Bauteile |
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STK0260D Datenblatt(PDF) 3 Page - AUK corp |
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STK0260D Datenblatt(HTML) 3 Page - AUK corp |
3 / 8 page KSD-T6O004-000 3 STK0260D Electrical Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 600 - - V Gate-threshold voltage VGS(th) ID=250µA, VDS= VGS 2.0 - 4.0 V Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 µA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=1.0A - 3.8 4.7 Ω Forward transfer admittance ④ gfs VDS=10V, ID=1.0A - 2.3 - S Input capacitance Ciss - 290 435 Output capacitance Coss - 33 49 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 6.0 9.0 pF Turn-on delay time td(on) - 22 - Rise time tr - 10.5 - Turn-off delay time td(off) - 7 - Fall time tf VDD=300V, VGS=10V ID=2.0A, RG=25Ω ③④ - 10.5 - ns Total gate charge Qg - 8.4 12.6 Gate-source charge Qgs - 1.4 2.1 Gate-drain charge Qgd VDD=300V, VGS=10V ID=2.0A ③④ - 2.6 3.9 nC Source-Drain Diode Ratings and Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current IS - - 2.0 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 8.0 A Forward voltage ④ VSD VGS=0V, IS=2.0A - - 1.4 V Reverse recovery time trr - 230 - ns Reverse recovery charge Qrr Is=2.0A, VGS=0V dis/dt=100A/us - 0.84 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=9.5mH, IAS=2.0A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
Ähnliche Teilenummer - STK0260D |
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Ähnliche Beschreibung - STK0260D |
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