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STK0260D Datenblatt(PDF) 3 Page - AUK corp

Teilenummer STK0260D
Bauteilbeschribung  Advanced Power MOSFET
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Hersteller  AUK [AUK corp]
Direct Link  https:www.auk.co.kr
Logo AUK - AUK corp

STK0260D Datenblatt(HTML) 3 Page - AUK corp

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KSD-T6O004-000
3
STK0260D
Electrical Characteristics
(Tc=25
°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250µA, VGS=0
600
-
-
V
Gate-threshold voltage
VGS(th)
ID=250µA, VDS= VGS
2.0
-
4.0
V
Drain-source leakage current
IDSS
VDS=600V, VGS=0V
-
-
1
µA
Gate-source leakage
IGSS
VDS=0V, VGS=±30V
-
-
±100
nA
Drain-Source on-resistance
RDS(ON)
VGS=10V, ID=1.0A
-
3.8
4.7
Forward transfer admittance
gfs
VDS=10V, ID=1.0A
-
2.3
-
S
Input capacitance
Ciss
-
290
435
Output capacitance
Coss
-
33
49
Reverse transfer capacitance
Crss
VGS=0V, VDS=25V, f=1MHz
-
6.0
9.0
pF
Turn-on delay time
td(on)
-
22
-
Rise time
tr
-
10.5
-
Turn-off delay time
td(off)
-
7
-
Fall time
tf
VDD=300V, VGS=10V
ID=2.0A, RG=25Ω
-
10.5
-
ns
Total gate charge
Qg
-
8.4
12.6
Gate-source charge
Qgs
-
1.4
2.1
Gate-drain charge
Qgd
VDD=300V, VGS=10V
ID=2.0A
-
2.6
3.9
nC
Source-Drain Diode Ratings and Characteristics
(Tc=25
°C)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Continuous source current
IS
-
-
2.0
Source current (Pulsed)
ISM
Integral reverse diode
in the MOSFET
-
-
8.0
A
Forward voltage
VSD
VGS=0V, IS=2.0A
-
-
1.4
V
Reverse recovery time
trr
-
230
-
ns
Reverse recovery charge
Qrr
Is=2.0A, VGS=0V
dis/dt=100A/us
-
0.84
-
uC
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=9.5mH, IAS=2.0A, VDD=50V, RG=25Ω
Pulse Test : Pulse Width< 300us, Duty cycle≤ 2%
Essentially independent of operating temperature


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