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CS3-16D Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
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CS3-16D Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CS3-16B CS3-16D CS3-16M CS3-16N SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS TO-3 50 MIL CASE Central Semiconductor Corp. TM R1 (18-August 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CS3-16B series type is a Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CS3 CS3 CS3 CS3 -16B -16D -16M -16N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 800 V RMS On-State Current (TC=90°C) IT(RMS) 16 A Peak One Cycle Surge (t=10ms) ITSM 160 A I2t Value for Fusing (t=10ms) I2t 128 A2s Peak Gate Power (tp=10µs) PGM 40 W Average Gate Power Dissipation PG (AV) 1.0 W Peak Forward Gate Current (tp=10µs) IFGM 4.0 A Peak Forward Gate Voltage (tp=10µs) VFGM 16 V Peak Reverse Gate Voltage (tp=10µs) VRGM 5.0 V Critical Rate of Rise of On-State Current di/dt 100 A/µs Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +125 °C Thermal Resistance ΘJC 1.5 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM 10 µA IDRM, IRRM Rated VDRM, VRRM, TC=125°C 2.0 mA IGT VD=12V, RL=10Ω 3.4 15 mA IH IT=100mA 8.8 20 mA VGT VD=12V, RL=10Ω 0.64 1.50 V VTM ITM=32A, tp=380µs 1.40 1.60 V dv/dt VD=2/3 VDRM, TC=125°C 500 V/µs |
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Ähnliche Beschreibung - CS3-16D |
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