Datenblatt-Suchmaschine für elektronische Bauteile |
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1PS76SB40 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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1PS76SB40 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES • Low forward voltage • Guard ring protected • Very small plastic SMD package • Low diode capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. Fig.1 Simplified outline (SOD323) and symbol. Marking code: S4. handbook, 4 columns ka MAM283 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 120 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 120 mA IFSM non-repetitive peak forward current tp <10ms − 200 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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