Datenblatt-Suchmaschine für elektronische Bauteile |
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1PS76SB62 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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1PS76SB62 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Feb 16 2 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB62 FEATURES • Ultra high switching speed • Very low capacitance • High breakdown voltage • Guard ring protected • Two pin very small plastic SMD package. APPLICATIONS • Ultra high-speed switching • High frequency applications. DESCRIPTION Epitaxial Schottky barrier diode encapsulated in a SOD323 (SC-76) very small plastic SMD package. ESD sensitive device, observe handling precautions. PINNING PIN DESCRIPTION 1 cathode 2 anode olumns 12 MGU328 Fig.1 Simplified outline (SOD323; SC-76) and symbol. Marking code: S6. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD323 (SC-76) standard mounting conditions. SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 20 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 2 mA; see Fig.2; note 1 800 mV IR reverse current VR = 40 V; see Fig.3; note 1 1 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.4 0.6 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
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