Datenblatt-Suchmaschine für elektronische Bauteile |
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CZT900K Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
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CZT900K Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT900K type is an NPN silicon Darlington transistor man- ufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 10 V Collector Current IC 1.0 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=30V 100 nA BVCBO IC=10µA 50 V BVCEO IC=10mA 25 V BVEBO IE=100µA 10 V VCE(SAT) IC=100mA, IB=0.1mA 1.5 V VBE(ON) VCE=5.0V, IC=100mA 2.0 V hFE VCE=5.0V, IC=10mA 900,000 hFE VCE=5.0V, IC=100mA 900,000 fT VCE=5.0V, IC=10mA, f=100MHz 125 MHz CZT900K SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR SOT-223 CASE Central Semiconductor Corp. TM R2 (17-June 2004) |
Ähnliche Teilenummer - CZT900K |
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Ähnliche Beschreibung - CZT900K |
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