Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ111S Datenblatt(PDF) 7 Page - Infineon Technologies AG |
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BUZ111S Datenblatt(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page BUZ 111S Data Sheet 7 05.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V -60 -20 20 60 100 140 ˚C 200 Tj 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 0.022 0.024 Ω 0.028 BUZ111S typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 240 µA -60 -20 20 60 100 140 ˚C 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 min typ max Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz 0 10 20 V 40 VDS 2 10 3 10 4 10 pF Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 0 10 1 10 2 10 3 10 A BUZ111S T j = 25 ˚C typ T j = 25 ˚C (98%) T j = 175 ˚C typ T j = 175 ˚C (98%) |
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