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1PS89SB74 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer 1PS89SB74
Bauteilbeschribung  Schottky barrier double diode
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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2001 Apr 20
2
Philips Semiconductors
Product specification
Schottky barrier double diode
1PS89SB74
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Ultra small plastic SMD package
• Low capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT490
(SC-89) ultra small plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
cathode (k2)
3
common (k1,a2)
fpage
12
Top view
MBK837
3
3
12
MLC358
Fig.1
Simplified outline (SOT490; SC-89) and
symbol.
Marking code: S7.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode unless otherwise specified
VR
continuous reverse voltage
70
V
IF
continuous forward current
70
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
70
mA
IFSM
non-repetitive peak forward current
tp <10ms
100
mA
Ptot
total power dissipation (per package)
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
+150
°C
Tamb
operating ambient temperature
−65
+150
°C


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