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SI6542DQ Datenblatt(PDF) 6 Page - Vishay Siliconix |
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SI6542DQ Datenblatt(HTML) 6 Page - Vishay Siliconix |
6 / 6 page Si6542DQ Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70171 S-00873—Rev. F, 01-May-00 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL –1.0 –0.5 0.0 0.5 1.0 –50 –25 0 25 50 75 100 125 150 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Square Wave Pulse Duration (sec) VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 024 68 10 TJ = 150_C TJ = 25_C ID = 1.9 A ID = 250 µA 20 10 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Time (sec) 120 100 80 60 40 20 0 0.001 0.010 0.100 1.000 10.000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 0.1 0.01 10–4 10–3 10–2 10–1 110 30 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 Notes: 4. Surface Mounted PDM t2 |
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