Datenblatt-Suchmaschine für elektronische Bauteile |
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2PA1774R Datenblatt(PDF) 3 Page - NXP Semiconductors |
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2PA1774R Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Jun 01 3 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 833 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−100 nA IE = 0; VCB = −30 V; Tj = 150 °C −−5 µA IEBO emitter cut-off current IC = 0; VEB = −4V −−100 nA hFE DC current gain IC = −1 mA; VCE = −6 V; note 1 2PA1774Q 120 270 2PA1774R 180 390 2PA1774S 270 560 VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 −−200 mV Cc collector capacitance IE =ie = 0; VCB = −12 V; f = 1 MHz − 2.2 pF fT transition frequency IE = −2 mA; VCE = −12 V; f = 100 MHz; note 1 100 − MHz |
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