Datenblatt-Suchmaschine für elektronische Bauteile |
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2PD601AQ Datenblatt(PDF) 3 Page - NXP Semiconductors |
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2PD601AQ Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 23 3 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =60V − 10 nA IE = 0; VCB =60V; Tj = 150 °C − 5 µA IEBO emitter cut-off current IC = 0; VEB =5V − 10 nA hFE DC current gain IC = 100 mA; VCE = 2 V; note 1 90 − DC current gain IC = 2 mA; VCE = 10 V; note 1 2PD601AQ 160 260 2PD601AR 210 340 2PD601AS 290 460 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 − 500 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 3.5 pF fT transition frequency IC = 2 mA; VCE =10V; f = 100 MHz 2PD601AQ 100 − MHz 2PD601AR 120 − MHz 2PD601AS 140 − MHz |
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