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2PD602AS Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer 2PD602AS
Bauteilbeschribung  NPN general purpose transistor
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PD602AS Datenblatt(HTML) 2 Page - NXP Semiconductors

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1999 Apr 23
2
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD602A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB710A.
MARKING
TYPE NUMBER
MARKING CODE
2PD602AQ
XQ
2PD602AR
XR
2PD602AS
XS
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SC-59) and symbol.
handbook, halfpage
12
1
3
2
3
MAM321
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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