KTA1505S datasheet(1/2 Pages) KEC

Teilenummer	KTA1505S

Bauteilbeschribung	EPITAXIAL PLANAR PNP TRANSISTOR

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2009. 10. 19

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SEMICONDUCTOR

TECHNICAL DATA

KTA1505S

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 4

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Excellent h

FE Linearity

: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.

・Complementary to KTC3876S.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. EMITTER

2. BASE

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

(Note) : hFE(1) Classification

O:70

～140 Y:120～240

GR:200

～400

hFE(2) Classification

O:25Min.

Y:40Min.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-35

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-500

mA

Base Current

IB

-50

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

h

Rank

Type Name

Marking

Lot No.

AZ

FE

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-35V, IE=0

-

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-0.1

μA

DC Current Gain (Note)

hFE(1)

VCE=-1V, IC=-100mA

70

-

400

hFE(2)

VCE=-6V, IC=-400mA

25

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-100mA, IB=-10mA

-

-0.1

-0.25

V

Base-Emitter Voltage

VBE

VCE=-1V, IC=-100mA

-

-0.8

-1.0

V

Transition Frequency

fT

VCE=-6V, IC=-20mA

-

200

-

MHz

Collector Output Capacitance

Cob

VCB=-6V, IE=0, f=1MHz

-

13

-

pF

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