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L6599N Datenblatt(PDF) 8 Page - STMicroelectronics |
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L6599N Datenblatt(HTML) 8 Page - STMicroelectronics |
8 / 36 page Electrical characteristics L6599 8/36 5 Electrical characteristics TJ = 0 to 105°C, VCC = 15V, VBOOT = 15V, CHVG = CLVG = 1nF; CF = 470pF; RRFmin = 12kΩ; unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test condition Min Typ Max Unit IC supply voltage VCC Operating range After device turn-on 8.85 16 V VCC(ON) Turn-ON threshold Voltage rising 10 10.7 11.4 V VCC(OFF) Turn-OFF threshold Voltage falling 7.45 8.15 8.85 V Hys Hysteresis 2.55 V VZ VCC clamp voltage Iclamp = 10mA 16 17 17.9 V Supply current Istart-up Start-up current Before device turn-ON VCC = VCC(ON) - 0.2V 200 250 µA Iq Quiescent current Device ON, VSTBY = 1V 1.5 2 mA Iop Operating current Device ON, VSTBY = VRFmin 3.5 5 mA Iq Residual consumption VDIS > 1.85V or VDELAY > 3.5V or VLINE < 1.25 V or VLINE = Vclamp 300 400 µA High-side floating gate-drive supply ILKBOOT VBOOT pin leakage current VBOOT = 580V 5 µA ILKOUT OUT pin leakage current VOUT = 562V 5 µA rDS(on) Synchronous bootstrap diode ON-resistance VLVG = High 150 Ω Overcurrent comparator IISEN Input bias current VISEN = 0 to VISENdis -1 µA tLEB Leading edge blanking After VHVG and VLVG low-to-high transition 250 ns VISENx Frequency shift threshold Voltage rising (1) 0.76 0.8 0.84 V Hysteresis Voltage falling 50 mV VISENdis Latch OFF threshold Voltage rising (1) 1.44 1.5 1.56 V td(H-L) Delay to output 300 400 ns |
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Ähnliche Beschreibung - L6599N |
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