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GS76024AB Datenblatt(PDF) 1 Page - GSI Technology

Teilenummer GS76024AB
Bauteilbeschribung  256K x 24 6Mb Asynchronous SRAM
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Hersteller  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS76024AB Datenblatt(HTML) 1 Page - GSI Technology

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GS76024AB
256K x 24
6Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
BGA
Commercial Temp
Industrial Temp
Rev: 1.02 12/2005
1/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 260/210/180 mA at minimum
cycle time
• Single 3.3 V ± 0.3V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40 to 85°C
• Package
B: 14 mm x 22 mm, 119-bump, 1.27 mm pitch BGA
Description
The GS76024A is a high speed CMOS static RAM organized
as 262,144 words by 24 bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS76024A is available in a 119-bump BGA
package.
119-bump Ball Grid Array Package
Pin Descriptions
Symbol
Description
Symbol
Description
A0 to A17
Address input
DQ1 to DQ24
Data input/output
WE
Write enable input
OE
Output enable input
CE
Chip enable input
VDD
+3.3V power supply
VSS
Ground
CE
WE
OE
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Control
I/O Buffer
A0
DQ1
DQ24
A17
Block Diagram


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