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GS74104TP-10I Datenblatt(PDF) 7 Page - GSI Technology |
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GS74104TP-10I Datenblatt(HTML) 7 Page - GSI Technology |
7 / 12 page Rev: 1.07 1/2001 7/12 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS74104TP/J Read Cycle 2: WE = VIH * These parameters are sampled and are not 100% tested. Write Cycle Parameter Symbol -8 -10 -12 -15 Unit Min Max Min Max Min Max Min Max Write cycle time tWC 8 — 10 — 12 — 15 — ns Address valid to end of write tAW 5.5 — 7 — 8 — 10 — ns Chip enable to end of write tCW 5.5 — 7 — 8 — 10 — ns Data set up time tDW 4 — 5 — 6 — 7 — ns Data hold time tDH 0 — 0 — 0 — 0 — ns Write pulse width tWP 5.5 — 7 — 8 — 10 — ns Address set up time tAS 0 — 0 — 0 — 0 — ns Write recovery time (WE) tWR 0 — 0 — 0 — 0 — ns Write recovery time (CE) tWR1 0 — 0 — 0 — 0 — ns Output Low Z from end of write tWLZ* 3 — 3 — 3 — 3 — ns Write to output in High Z tWHZ* — 3.5 — 4 — 5 — 6 ns tAA tRC Address tAC tLZ tOE tOLZ CE OE Data Out tHZ tOHZ DATA VALID High impedance |
Ähnliche Teilenummer - GS74104TP-10I |
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Ähnliche Beschreibung - GS74104TP-10I |
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