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H01N60SJ Datenblatt(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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H01N60SJ Datenblatt(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
1 / 5 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 H01N60SI, H01N60SJ HSMC Product Specification H01N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Features • 1A, 600V, R DS(on)=12Ω@VGS=10V • Low Gate Charge 15nC(Typ.) • Low C rss 4pF(Typ.) • Fast Switching • Improved d v/dt Capability Absolute Maximum Ratings Symbol Parameter H01N60SI / H01N60SJ Units V DSS Drain-Source Voltage 600 V Drain Current (Continuous T C=25 oC) 1 A I D Drain Current (Continuous T C=100 oC) 0.6 A I DM Drain Current (Pulsed) *1 4A V GS Gate-Source Voltage ±30 V E AS Single Pulse Avalanche Energy (L=59mH, I AS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) 50 mJ I AR Avalanche Current *1 1A E AR Repetitive Avalanche Energy 2.8 mJ dv/dt Peak Diode Recovery dv/dt *2 4.5 V/nS V GS Gate-to-Source Voltage (Continue) ±20 V Total Power Dissipation (T A=25 oC) 2.5 W Total Power Dissipation (T C=25 oC) 28 W P D Derate above 25 °C 0.22 W/ °C T j, Tstg Operating and Storage Temperature Range -55 to +150 °C T L Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds 300 °C *1: Repetitive Rating : Pulse width limited by maximum junction temperature *2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25 oC H01N60S Series Pin Assignment 1 2 3 Tab 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 1 2 3 Tab H01N60S Series Symbol: G D S |
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