Datenblatt-Suchmaschine für elektronische Bauteile |
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74F225 Datenblatt(PDF) 6 Page - NXP Semiconductors |
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74F225 Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 14 page Philips Semiconductors Product specification 74F225 16 × 5 asynchronous FIFO (3-State) June 15, 1992 6 DC ELECTRICAL CHARACTERISTICS (Over recommended operating free-air temperature range unless otherwise noted.) SYMBOL PARAMETER TEST CONDITIONS1 LIMITS UNIT MIN TYP2 MAX IR, OR, VCC = MIN, VIL = MAX ±10%V CC 2.5 V VOH High-level output voltage UNCPOUT VIH = MIN, IOH = MAX ±5%V CC 2.7 V Data VCC = MIN, VIL = MAX ±10%V CC 2.4 V outputs VIH = MIN, IOH = MAX ±5%V CC 2.7 V VOL Low-level output voltage VCC = MIN, VIL = MAX ±10%V CC 0.35 0.50 V VIH = MIN, IOL = MAX ±5%V CC 0.35 0.50 V VIK Input clamp voltage VCC = MIN, II = IIK -0.73 -1.2 V II Input current at maximum input voltage VCC = MAX, VI = 7.0V 100 µA IIH High–level input current VCC = MAX, VI = 2.7V 20 µA IIL Low–level input current VCC = MAX, VI = 0.5V –20 µA IOZH Offset–output current, High–level voltage applied VCC = MAX, VI = 2.7V 50 µA IOZL Offset–output current, Low–level voltage applied VCC = MAX, VI = 0.5V –50 µA IOS Short-circuit output current3 VCC = MAX -60 -150 mA ICC Supply current (total) VCC = MAX 65 95 mA NOTES: 1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type. 2. All typical values are at VCC = 5V, Tamb = 25°C. 3. Not more than one output should be shorted at a time. For testing IOS, the use of High-speed test apparatus and/or sample-and-hold techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence of parameter tests, IOS tests should be performed last. |
Ähnliche Teilenummer - 74F225 |
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Ähnliche Beschreibung - 74F225 |
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