BC856BW datasheet(3/6 Pages) WEITRON

Teilenummer	BC856BW

Bauteilbeschribung	General Purpose Transistor PNP Silicon

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I

C , COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

I

C , COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

–0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50

–100

–200

V

CE= –10 V

T

A = 25°C

2.0

1.5

1.0

0.7

0.5

0.3

0.2

–0.1

–0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50 –100

T

A = 25°C

V

BE(sat) @ I C /I B=10

V

BE(on) @ V CE = –10 V

V

CE(sat) @ I C /I B = 10

T

A = 25°C

–1.0

–0.9

–0.8

–0.7

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

0

1.0

1.2

1.6

2.0

2.4

2.8

I

B , BASE CURRENT (mA)

Figure 3. Collector Saturation Region

I

C= –200 mA

–55°C to +125°C

I

C , COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

–0.2

–1.0

–10

–100

–0.02

–0.1

–1.0

–10

–20

–2.0

–1.6

–1.2

–0.8

–0.4

0

I

C =

–10 mA

I

C= –100 mA

I

C= –20 mA

I

C= –50 mA

V

R , REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

I

C , COLLECTOR CURRENT (mAdc)

Figure 6. Current–Gain – Bandwidth Product

T

A=25°C

V

CE = –10V

T

A = 25°C

C

ob

C

ib

400

300

200

150

100

80

60

40

30

20

10.0

7.0

5.0

3.0

2.0

1.0

–0.4

–0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–0.5

–1.0

–2.0

–3.0

–5.0

–10

–20

–30

–50

BC856AW/BW

BC857AW/BW

BC858AW/BW/CW

BC857 / BC858

http://www.weitron.com.tw

WEITRON

3/6

14-Jun-06

WEITRON

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