IRLI540NPBF datasheet(2/8 Pages) IRF

Teilenummer	IRLI540NPBF

Bauteilbeschribung	HEXFET Power MOSFET

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Hersteller	IRF [International Rectifier]

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IRLI540NPbF

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.11 V/°C Reference to 25°C, ID = 1mA

0.044

VGS = 10V, ID = 12A

0.053

Ω

VGS = 5.0V, ID = 12A

0.063

VGS = 4.0V, ID = 10A

VGS(th)

Gate Threshold Voltage

1.0

2.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

14

S

VDS = 25V, ID = 18A

25

µA

VDS = 100V, VGS = 0V

250

VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

100

nA

VGS = 16V

Gate-to-Source Reverse Leakage

-100

VGS = -16V

Qg

Total Gate Charge

74

ID = 18A

Qgs

Gate-to-Source Charge

9.4

nC

VDS = 80V

Qgd

Gate-to-Drain ("Miller") Charge

38

VGS = 5.0V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

11

VDD = 50V

tr

Rise Time

81

ns

ID = 18A

td(off)

Turn-Off Delay Time

39

RG = 5.0Ω, VGS = 5.0V

tf

Fall Time

62

RD = 2.7Ω, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss

Input Capacitance

1800

VGS = 0V

Coss

Output Capacitance

350

VDS = 25V

Crss

Reverse Transfer Capacitance

170

= 1.0MHz, See Fig. 5

C

Drain to Sink Capacitance

12

= 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

S

D

G

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

RDS(on)

Static Drain-to-Source On-Resistance

nH

pF

S

D

G

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting TJ = 25°C, L = 1.9mH

RG = 25Ω, IAS = 18A. (See Figure 12)

t=60s, =60Hz

ISD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Uses IRL540N data and test conditions

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

1.3

V

TJ = 25°C, IS = 18A, VGS = 0V

trr

Reverse Recovery Time

190 290

ns

TJ = 25°C, IF = 18A

Qrr

Reverse RecoveryCharge

1.1

1.7

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

A

23

120

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