LA733P datasheet(1/4 Pages) ONSEMI

Teilenummer	LA733P

Bauteilbeschribung	Amplifier Transistors (PNP Silicon)

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Hersteller	ONSEMI [ON Semiconductor]

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August, 2001 – Rev. 1

1

Publication Order Number:

LA733P/D

LA733P, LA733Q

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

–48

Vdc

Collector-Base Voltage

VCBO

–60

Vdc

Emitter-Base Voltage

VEBO

–5.0

Vdc

Collector Current – Continuous

IC

–100

mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction to Ambient

RθJA

200

°C/W

Thermal Resistance,

Junction to Case

RθJC

83.3

°C/W

Device

Package

Shipping

ORDERING INFORMATION

LA733P

TO–92

http://onsemi.com

TO–92

CASE 29

STYLE 14

5000 Units/Box

3

2

1

LA733Q

TO–92

5000 Units/Box

COLLECTOR

2

3

BASE

1

EMITTER

LA733x = Specific Device Code

x

= P or Q

Y

= Year

WW

= Work Week

MARKING DIAGRAMS

LA

733x

YWW

Ähnliche Beschreibung - LA733P

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Motorola, Inc	BC251	161Kb / 5P	AMPLIFIER TRANSISTORS PNP SILICON
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New Jersey Semi-Conduct...	2N3727	128Kb / 1P	PNP SILICON AMPLIFIER TRANSISTORS
Motorola, Inc	BC16116	199Kb / 8P	Amplifier Transistors PNP Silicon
ON Semiconductor	BC212B	60Kb / 4P	Amplifier Transistors PNP Silicon March, 2007 ??Rev. 4
Leshan Radio Company	L2N5401	99Kb / 4P	Amplifier Transistors PNP Silicon
ON Semiconductor	2N5400	83Kb / 6P	Amplifier Transistors PNP Silicon December, 2005 ??Rev. 1
	BC307B	54Kb / 4P	Amplifier Transistors PNP Silicon March, 2007 ??Rev. 4
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