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WV3HG64M72EEU403PD4ISG Datenblatt(PDF) 6 Page - White Electronic Designs Corporation |
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WV3HG64M72EEU403PD4ISG Datenblatt(HTML) 6 Page - White Electronic Designs Corporation |
6 / 11 page WV3HG64M72EEU-PD4 May 2006 Rev. 2 ADVANCED 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DDR2 ICC SPECIFICATIONS AND CONDITIONS Includes DDR2 SDRAM components only VCC = +1.8V ± 0.1V Symbol Proposed Conditions 806 665 534 403 Units ICC0* Operating one bank active-precharge current; tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,065 1, 020 1,020 mA ICC1* Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD = tRCD(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W TBD 1,200 1,115 1,155 mA ICC2P* Precharge power-down current; All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD 372 372 372 mA ICC2Q** Precharge quiet standby current; All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD 615 570 570 mA ICC2N** Precharge standby current; All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 660 615 615 mA ICC3P** Active power-down current; All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0 TBD 570 570 570 mA Slow PDN Exit MRS(12) = 1 TBD 408 408 408 mA ICC3N** Active standby current; All banks open; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 795 750 750 mA ICC4W* Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,560 1,380 1,290 mA ICC4R* Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W TBD 1,605 1,425 1,290 mA ICC5B** Burst auto refresh current; tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,650 1,560 1,560 mA ICC6** Self refresh current; CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Normal TBD 72 72 72 mA ICC7* Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are SWITCHING. TBD 2,280 2,280 2,280 mA Note: ICC specification is based on SAMSUNG components. Other DRAM Manufacturers specification may be different. *: Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P (CKE LOW) mode. **: Value calculated reflects all module ranks in this operating condition. |
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