Datenblatt-Suchmaschine für elektronische Bauteile |
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CD214B-R3200 Datenblatt(PDF) 1 Page - Bourns Electronic Solutions |
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CD214B-R3200 Datenblatt(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214B-R350~R31000 Glass Passivated Rectifiers Features ■ Lead free as standard ■ RoHS compliant* ■ Glass passivated chip ■ Low reverse leakage current ■ Low forward voltage drop ■ High current capability General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Notes: 1 See Forward Derating Curve. 2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC. 3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas. The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass Passivated Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Parameter Symbol CD214B-R350~R31000 Unit Operating Temperature Range TJ -65 to +175 °C Storage Temperature Range TSTG -65 to +175 °C Parameter Symbol CD214B- Unit R350 R3100 R3200 R3400 R3600 R3800 R31000 Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Max. Average Forward Rectified Current1 I(AV) 3.0 A DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 25 °C) IR 5.0 µA DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 125 °C) IR 50 µA Typical Junction Capacitance2 CJ 40 pF Maximum Instantaneous Forward Voltage @ 1 A VF 1.0 V Typical Thermal Resistance3 RθJL 13 °C/W Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 115 A |
Ähnliche Teilenummer - CD214B-R3200 |
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Ähnliche Beschreibung - CD214B-R3200 |
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