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SI6975DQ Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI6975DQ Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si6975DQ Vishay Siliconix New Product www.vishay.com 4 Document Number: 71319 S-02318—Rev. A, 23-Oct-00 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 40 80 20 Single Pulse Power, Junction-to-Ambient Time (sec) 60 10–3 10–2 1 10 600 10–1 10–4 100 –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 124_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 10–3 10–2 110 10–1 10–4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) 0.1 10 1 0.01 0.001 100 |
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