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2PA1576S-Q Datenblatt(PDF) 2 Page - Nexperia B.V. All rights reserved

Teilenummer 2PA1576S-Q
Bauteilbeschribung  PNP general-purpose transistor
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Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
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Nexperia
2PA1576S-Q
PNP general-purpose transistor
6. Ordering information
Table 3. Ordering information
Package
Type number
Name
Description
Version
2PA1576S-Q
SC-70
plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2
mm x 1.25 mm x 0.95 mm body
SOT323
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
2PA1576S-Q
F%S
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-60
V
VCEO
collector-emitter voltage open base
-
-50
V
VEBO
emitter-base voltage
open collector
-
-6
V
IC
collector current
-
-150
mA
ICM
peak collector current
-
-200
mA
IBM
peak base current
-
-200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
200
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
[1]
-
-
625
K/W
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2PA1576S-Q
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2022. All rights reserved
Product data sheet
19 August 2022
2 / 8


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