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FDS2672 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDS2672 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2006 Fairchild Semiconductor Corporation FDS2672 Rev. B www.fairchildsemi.com 1 tm August 2006 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 200 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) 3.9 A -Pulsed 50 EAS Single Pulse Avalanche Energy (Note 3) 37.5 mJ PD Power Dissipation (Note 1a) 2.5 W Power Dissipation (Note 1b) 1.0 TJ, TSTG Operating and Storage Temperature -55 to 150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 Device Marking Device Reel Size Tape Width Quantity FDS2672 FDS2672 13’’ 12mm 2500 units FDS2672 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70m Ω Features Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) RoHS compliant General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC-DC conversion Pin 1 SO-8 4 3 2 1 5 6 7 8 D D D D G S S S |
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