©2006 Fairchild Semiconductor Corporation

FDS2672 Rev. B

www.fairchildsemi.com

1

tm

August 2006

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

200

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

(Note 1a)

3.9

A

-Pulsed

50

Single Pulse Avalanche Energy

(Note 3)

37.5

mJ

Power Dissipation

(Note 1a)

2.5

W

Power Dissipation

(Note 1b)

1.0

Operating and Storage Temperature

-55 to 150

°C

Thermal Resistance, Junction to Case

(Note 1)

25

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Thermal Resistance, Junction to Ambient

(Note 1b)

125

Device Marking

Device

Reel Size

Tape Width

Quantity

FDS2672

FDS2672

13’’

12mm

2500 units

FDS2672

200V, 3.9A, 70m

Ω

Features

Fast switching speed

High performance trench technology for extremely low

RoHS compliant

General Description

This single N-Channel MOSFET is produced using

process that has been especially tailored to minimize

the on-state resistance and yet maintain superior switching

performance.

Application

DC-DC conversion

Pin 1

SO-8

4

3

2

1

5

6

7

8

D

D

D

D

G

S

S

S