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STB11NM60FD-1 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STB11NM60FD-1
Bauteilbeschribung  N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NM60FD-1 Datenblatt(HTML) 5 Page - STMicroelectronics

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STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 250V, ID = 5.5A
RG =4.7Ω VGS = 10V
(see Figure 14)
20
16
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 400V, ID = 11A,
RG =4.7Ω, VGS = 10V
(see Figure 16)
10
15
24
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
11
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
44
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 11A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11A, VDD = 50V
di/dt = 100A/µs,
(see Figure 19)
140
680
A
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11A, VDD = 50V
di/dt = 100A/µs,
Tj=150°C
(see Figure 19)
260
1600
13
ns
nC
A


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