Datenblatt-Suchmaschine für elektronische Bauteile |
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STB11NM60FD-1 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STB11NM60FD-1 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 17 page STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 250V, ID = 5.5A RG =4.7Ω VGS = 10V (see Figure 14) 20 16 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 400V, ID = 11A, RG =4.7Ω, VGS = 10V (see Figure 16) 10 15 24 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 11 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 44 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 11A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11A, VDD = 50V di/dt = 100A/µs, (see Figure 19) 140 680 A ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11A, VDD = 50V di/dt = 100A/µs, Tj=150°C (see Figure 19) 260 1600 13 ns nC A |
Ähnliche Teilenummer - STB11NM60FD-1 |
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Ähnliche Beschreibung - STB11NM60FD-1 |
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