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BA220 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BA220
Bauteilbeschribung  High-speed diode
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BA220 Datenblatt(HTML) 2 Page - NXP Semiconductors

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1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diode
BA220
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage:
max. 10 V
• Repetitive peak reverse voltage:
max. 10 V
• Repetitive peak forward current:
max. 400 mA.
APPLICATIONS
• High-speed switching.
DESCRIPTION
The BA220 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
10
V
VR
continuous reverse voltage
10
V
IF
continuous forward current
see Fig.2; note 1
200
mA
IFRM
repetitive peak forward current
400
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
9A
t = 100
µs
3A
t=1s
1A
Ptot
total power dissipation
Tamb =25 °C; note 1
350
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C


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