BAT754S datasheet(3/8 Pages) PHILIPS

Teilenummer	BAT754S

Bauteilbeschribung	Schottky barrier double diodes

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Aug 05

3

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ≤ 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT23 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VR

continuous reverse voltage

−

30

V

IF

continuous forward current

−

200

mA

IFRM

repetitive peak forward current

tp ≤ 1s; δ≤ 0.5

−

300

mA

IFSM

non-repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

600

mA

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

125

°C

Tamb

operating ambient temperature

−65

+125

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

VF

forward voltage

see Fig.6

IF = 0.1 mA

−

200

mV

IF =1mA

−

260

mV

IF =10mA

−

340

mV

IF =30mA

−

420

mV

IF = 100 mA

600

−

mV

IR

reverse current

VR = 25 V; note 1; see Fig.7

−

2

µA

Cd

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.8

−

10

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

500

K/W

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