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TISP820XM Datenblatt(PDF) 4 Page - Bourns Electronic Solutions

Teile-Nr. TISP820XM
Beschreibung  COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
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Hersteller  BOURNS [Bourns Electronic Solutions]
Homepage  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

TISP820XM Datenblatt(HTML) 4 Page - Bourns Electronic Solutions

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MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
Electrical Characteristics for TISP8200M, TA = 25 °C (Unless Otherwise Noted)
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
ID
Off-state current
VD =VDRM, VGK =0
TJ =0 °C-5
µA
TJ =85 °C
-50
µA
IR
Reverse current
VR =VRRM, VGA =-70 V
TJ =0 °C5
µA
TJ =85 °C50
µA
V(BO)
Breakover voltage
dv/dt = -250 V/ms, Source Resistance = 300 , VGA = -80 V
-82
V
V(BO)
Breakover voltage
2/10 waveshape, (IK) IT =-100 A, di/dt max. = -58 A/µs, VGA =-80 V
-95
V
IH
Holding current
(IK) IT =-1 A, di/dt = 1 A/ms, VGA = -80 V
-150
mA
IGT
Gate trigger current
(IK) IT =-5 A, tp(g) 20 µs, VGA =-80 V
5
mA
Coff
Off-state capacitance
f = 1 MHz, Vd =1 V, VGA =-80 V, (see Note 4)
VD =0
35
pF
VD =-5V
20
VD =-50 V
10
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Electrical Characteristics for TISP8201M, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
ID
Off-state current
VD =VDRM, VGA =0
TJ =0 °C5
µA
TJ =85 °C50
µA
IR
Reverse current
VR =VRRM, VGK =70 V
TJ =0 °C-5
µA
TJ =85 °C
-50
µA
V(BO)
Breakover voltage
dv/dt = 250 V/ms, Source Resistance = 300 , VGK =80V
82
V
V(BO)
Breakover voltage
2/10 waveshape, (IA) IT = 100 A, di/dt max. = 58 A/µs, VGK =80V
95
V
IH
Holding current
(IA) IT =1 A, di/dt = -1 A/ms, VGK =80V
+20
mA
IGT
Gate trigger current
(IA) IT =5 A, tp(g) 20 µs, VGK =80V
-5
mA
Coff
Off-state capacitance
f = 1 MHz, Vd =1 V, VGK =80V, (see Note 4)
VD =0
35
pF
VD =5V
20
VD =50V
10
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Parameter
Test Conditions
Min
Typ
Max
Unit
RθJA
Junction to free air thermal resistance
Ptot =0.52W, TA =70°C, 5 cm
2, FR4 PCB
160
°C/W


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