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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BC817 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BC817 Datenblatt(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Jun 01 3 Philips Semiconductors Product specification NPN general purpose transistor BC817 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. Notes 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. 2. VBE decreases by approx. 2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =20V −− 100 nA IE = 0; VCB = 20 V; Tj = 150 °C −− 5 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC = 100 mA; VCE = 1 V; note 1; see Figs 2, 3 and 4 BC817 100 − 600 BC817-16 100 − 250 BC817-25 160 − 400 BC817-40 250 − 600 hFE DC current gain IC = 500 mA; VCE = 1 V; note 1 40 −− VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 −− 700 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; note 2 −− 1.2 V Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz; − 5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz; 100 −− MHz |
Ähnliche Teilenummer - BC817 |
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Ähnliche Beschreibung - BC817 |
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