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BC807-40 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BC807-40 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 08 3 Philips Semiconductors Product specification PNP general purpose transistor BC807 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. Notes 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. 2. VBE decreases by about −2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −20 V −−−100 nA IE = 0; VCB = −20 V; Tj = 150 °C −−−5 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain IC = −100 mA; VCE = −1 V; note 1 see Figs 2, 3 and 4 BC807 100 − 600 BC807-16 100 − 250 BC807-25 160 − 400 BC807-40 250 − 600 hFE DC current gain IC = −500 mA; VCE = −1 V; note 1 40 −− VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 −−−700 mV VBE base-emitter voltage IC = −500 mA; VCE = −1V; notes 1 and 2 −−−1.2 V Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 9 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 80 −− MHz |
Ähnliche Teilenummer - BC807-40 |
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Ähnliche Beschreibung - BC807-40 |
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