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BC807-40 Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer BC807-40
Bauteilbeschribung  PNP general purpose transistor
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC807-40 Datenblatt(HTML) 3 Page - NXP Semiconductors

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1999 Apr 08
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Notes
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
2. VBE decreases by about −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−−−100 nA
IE = 0; VCB = −20 V; Tj = 150 °C
−−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −100 mA; VCE = −1 V; note 1
see Figs 2, 3 and 4
BC807
100
600
BC807-16
100
250
BC807-25
160
400
BC807-40
250
600
hFE
DC current gain
IC = −500 mA; VCE = −1 V; note 1
40
−−
VCEsat
collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1
−−−700 mV
VBE
base-emitter voltage
IC = −500 mA; VCE = −1V;
notes 1 and 2
−−−1.2
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
9
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 80
−−
MHz


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