Datenblatt-Suchmaschine für elektronische Bauteile |
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BCY79 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BCY79 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Jun 18 3 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BCY78 −−32 V BCY79 −−45 V VCEO collector-emitter voltage open base BCY78 −−32 V BCY79 −−45 V VEBO emitter-base voltage open collector −5V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 45 °C − 340 mW Tcase ≤ 45 °C − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 450 K/W Rth j-c thermal resistance from junction to case 150 K/W |
Ähnliche Teilenummer - BCY79 |
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Ähnliche Beschreibung - BCY79 |
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