Datenblatt-Suchmaschine für elektronische Bauteile |
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BCY87 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BCY87 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 Jun 20 4 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 Note 1. These characteristics are valid under the following conditions: a) Collector-base voltage of both transistors not exceeding 10 V; (V1C − 1B =V2C − 2B ≤ 10 V). b) Sum of the emitter currents from 10 to 100 µA; −(I1E +I2E) = 10 to 100 µA. Complete device; note 1 ratio of collector currents V1B − 1E =V2B − 2E BCY87 0.9 − 1.11 BCY88 0.8 − 1.25 BCY89 0.67 − 1.5 difference between base-emitter voltages I1C =I2C BCY87 −− 3mV BCY88 −− 6mV BCY89 −− 10 mV difference between base currents V1B − 1E =V2B − 2E BCY87 −− 25 nA BCY88 −− 80 nA BCY89 −− 300 nA DC current gain ratio I1C =I2C BCY87 0.9 − 1.11 BCY88 0.8 − 1.25 equivalent differential voltage Tamb = −20 °C to +90 °C BCY87 − 13 µV/K BCY88 − 26 µV/K BCY89 − 410 µV/K equivalent differential current Tamb = −20 °C to +90 °C BCY87 −− 0.5 nA/K BCY88 −− 2 nA/K BCY89 −− 10 nA/K SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I 1C I 2C ------- V 1B 1E – V 2B 2E – – I 1B I 2B – h 1FE h 2FE ----------- ∆V ∆T -------- ∆I ∆T ------- |
Ähnliche Teilenummer - BCY87 |
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Ähnliche Beschreibung - BCY87 |
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