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BCY87 Datenblatt(PDF) 4 Page - NXP Semiconductors

Teilenummer BCY87
Bauteilbeschribung  NPN general purpose transistors
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCY87 Datenblatt(HTML) 4 Page - NXP Semiconductors

  BCY87 Datasheet HTML 1Page - NXP Semiconductors BCY87 Datasheet HTML 2Page - NXP Semiconductors BCY87 Datasheet HTML 3Page - NXP Semiconductors BCY87 Datasheet HTML 4Page - NXP Semiconductors BCY87 Datasheet HTML 5Page - NXP Semiconductors BCY87 Datasheet HTML 6Page - NXP Semiconductors BCY87 Datasheet HTML 7Page - NXP Semiconductors BCY87 Datasheet HTML 8Page - NXP Semiconductors  
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1997 Jun 20
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BCY87; BCY88; BCY89
Note
1. These characteristics are valid under the following conditions:
a) Collector-base voltage of both transistors not exceeding 10 V; (V1C − 1B =V2C − 2B ≤ 10 V).
b) Sum of the emitter currents from 10 to 100
µA; −(I1E +I2E) = 10 to 100 µA.
Complete device; note 1
ratio of collector currents
V1B − 1E =V2B − 2E
BCY87
0.9
1.11
BCY88
0.8
1.25
BCY89
0.67
1.5
difference between
base-emitter voltages
I1C =I2C
BCY87
−−
3mV
BCY88
−−
6mV
BCY89
−−
10
mV
difference between base
currents
V1B − 1E =V2B − 2E
BCY87
−−
25
nA
BCY88
−−
80
nA
BCY89
−−
300
nA
DC current gain ratio
I1C =I2C
BCY87
0.9
1.11
BCY88
0.8
1.25
equivalent differential voltage Tamb = −20 °C to +90 °C
BCY87
13
µV/K
BCY88
26
µV/K
BCY89
410
µV/K
equivalent differential current
Tamb = −20 °C to +90 °C
BCY87
−−
0.5
nA/K
BCY88
−−
2
nA/K
BCY89
−−
10
nA/K
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
1C
I
2C
-------
V
1B
1E
V
2B
2E
I
1B
I
2B
h
1FE
h
2FE
-----------
∆V
∆T
--------
∆I
∆T
-------


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