Datenblatt-Suchmaschine für elektronische Bauteile |
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BD135 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BD135 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 12 2 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage MAM254 12 3 Top view 1 2 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BD135 − 45 V BD137 − 60 V BD139 − 100 V VCEO collector-emitter voltage open base BD135 − 45 V BD137 − 60 V BD139 − 80 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 1.5 A ICM peak collector current − 2A IBM peak base current − 1A Ptot total power dissipation Tmb ≤ 70 °C − 8W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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