BD231 datasheet(3/8 Pages) PHILIPS

Teilenummer	BD231

Bauteilbeschribung	PNP power transistor

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Apr 21

3

Philips Semiconductors

Product speciﬁcation

PNP power transistor

BD231

THERMAL CHARACTERISTICS

Note

1. Refer to TO-126; SOT32 standard mounting conditions.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. VBE decreases by about −2.3 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

Rth j-mb

thermal resistance from junction to mounting base

7

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−−100 nA

IE = 0; VCB = −30 V; Tj = 125 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

VCE = −2 V; see Fig.2

IC = −5mA

40

−−

IC = −150 mA

40

−

250

IC = −1A

25

−−

VCEsat

collector-emitter saturation voltage

IC = −1 A; IB = −0.1 A

−−−0.8

V

VBEsat

base-emitter saturation voltage

IC = −1 A; IB = −0.1 A

−−−1.1

V

VBE

base-emitter voltage

IC = −1 A; VCE = −2 V; note 1

−−−1.3

V

fT

transition frequency

IC = −50 mA; VCE = −5 V; f = 100 MHz −

50

−

MHz

DC current gain ratio of the

complementary pairs

I

C = −150 mA; VCE = −2V

−

1.3

1.6

h

FE1

h

FE2

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