Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1100 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BF1100 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 14 page 1995 Apr 25 4 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. Notes 1. RG1 connects gate 1 to VGG = 9 V; see Fig.27. 2. RG1 connects gate 1 to VGG = 12 V; see Fig.27. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 BF1100 500 K/W BF1100R 550 K/W Rth j-s thermal resistance from junction to soldering point note 2 BF1100 Ts =92 °C 290 K/W BF1100R Ts =78 °C 360 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S = 1 mA 13.2 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S = 1 mA 13.2 20 V V(F)S-G1 forward source-gate 1 voltage VG2-S =VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S =VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S =4V; VDS =9V; ID =20 µA 0.3 1 V VG2-S =4V; VDS =12V; ID =20 µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VG1-S =4V; VDS =9V; ID =20 µA 0.3 1.2 V VG1-S =4V; VDS =12V; ID =20 µA 0.3 1.2 V IDSX drain-source current VG2-S =4V; VDS =9V; RG1 = 180 kΩ; note 1 813 mA VG2-S =4V; VDS =12V; RG1 = 250 kΩ; note 2 813 mA IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S =12V − 50 nA IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =12V − 50 nA |
Ähnliche Teilenummer - BF1100 |
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Ähnliche Beschreibung - BF1100 |
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