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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1109R Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BF1109R Datenblatt(HTML) 4 Page - NXP Semiconductors |
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4 / 16 page  1997 Dec 08 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S = 4 V; VDS = 9 V; self-biasing current; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air note 1 350 K/W Rth j-s thermal resistance from junction to soldering point 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S = 0; ID =10 µA11 − V V(BR)G1-SS gate 1-source breakdown voltage VG2-S = 0; IG1-S =10 µA; ID =0 11 − V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10 µA11 − V VG2-S (th) gate 2-source threshold voltage VG1-S =9V; VDS =9V; ID =20 µA 0.3 1.2 V IDSX self-biasing drain current VG2-S =4V; VDS = 9 V 8 16 mA IG1-SS gate 1 cut-off current VG1-S =9V; VG2-S = 0; ID =0 − 20 nA IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =9V − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; Tj =25 °C24 30 − mS Cig1-ss input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF Cig2-ss input capacitance at gate 2 f = 1 MHz − 1.5 − pF Coss output capacitance f = 1 MHz − 1.3 − pF Crss reverse transfer capacitance f = 1 MHz − 25 40 fF F noise figure f = 800 MHz; YS =YS opt − 1.5 2.5 dB Gp power gain GS = 2 mS; BS =BS opt; GL = 0.5 mS; BL =BL opt; f = 200 MHz; see Fig.16 − 38 − dB GS = 3.3 mS; BS =BS opt; GL = 1 mS; BL =BL opt; f = 800 MHz; see Fig.17 − 20 − dB Xmod cross-modulation input level for k = 1% at 0 dB AGC; fw = 50 MHz; funw = 60 MHz; see Fig.18 85 −− dB µV input level for k = 1% at 40 dB AGC; fw = 50 MHz; funw = 60 MHz; see Fig.18 100 −− dB µV |
Ähnliche Teilenummer - BF1109R |
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Ähnliche Beschreibung - BF1109R |
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