Datenblatt-Suchmaschine für elektronische Bauteile |
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BF245C Datenblatt(PDF) 9 Page - NXP Semiconductors |
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BF245C Datenblatt(HTML) 9 Page - NXP Semiconductors |
9 / 11 page 1996 Jul 30 9 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values. VDS = 0; f = 1 kHz; Tamb =25 °C. handbook, halfpage 103 10−1 1 10 102 −4 −2 −1 0 MGE790 −3 RDSon (k Ω) BF245A BF245B BF245C VGS (V) Fig.21 Noise figure as a function of frequency; typical values. VDS = 15 V; VGS = 0; RG =1kΩ; Tamb =25 °C. Input tuned to minimum noise. handbook, halfpage 0 3 MGE786 110 typ 102 103 1 2 F (dB) f (MHz) |
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Ähnliche Beschreibung - BF245C |
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