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BF545C Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer BF545C
Bauteilbeschribung  N-channel silicon junction field-effect transistors
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF545C Datenblatt(HTML) 5 Page - NXP Semiconductors

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1996 Jul 29
5
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
Cis
input capacitance
VDS =15V; VGS = −10 V; f = 1 MHz
1.7
pF
VDS =15V; VGS = 0; f = 1 MHz
3
pF
Crs
reverse transfer capacitance
VDS =15V; VGS = −10 V; f = 1 MHz
0.8
pF
VDS =15V; VGS = 0; f = 1 MHz
0.9
pF
gis
common source input conductance VDS =10V; ID = 1 mA; f = 100 MHz
15
µS
VDS =10V; ID = 1 mA; f = 450 MHz
300
µS
gfs
common source transfer
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
2
mS
VDS =10V; ID = 1 mA; f = 450 MHz
1.8
mS
grs
common source reverse
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
−6
µS
VDS =10V; ID = 1 mA; f = 450 MHz
−40
µS
gos
common source output
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
30
µS
VDS =10V; ID = 1 mA; f = 450 MHz
60
µS
Fig.3
Drain current as a function of gate-source
cut-off voltage; typical values.
VDS = 15 V; Tj =25 °C.
handbook, halfpage
0
30
20
10
0
−2
−4
−8
−6
MBB467
IDSS
(mA)
VGSoff (V)
Fig.4
Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
VDS = 15 V; VGS = 0; Tj =25 °C.
handbook, halfpage
0
6
5
4
−2
−4
−8
MBB466
−6
VGSoff (V)
Yfs
(mS)


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