BF556B datasheet(7/11 Pages) PHILIPS

Teilenummer	BF556B

Bauteilbeschribung	N-channel silicon junction field-effect transistors

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 11 page

1996 Jul 29

7

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF556A; BF556B; BF556C

Fig.12 Gate current as a function of junction

temperature; typical values.

handbook, halfpage

103

10−1

1

10

102

150

50

0

−50

MRC150

100

IGSS

(pA)

Tj (°C)

VDS = 0; VGS = −20 V.

Fig.13 Power derating curve.

MRC166

0

100

200

300

0

50

100

150

P

tot

(mW)

Tamb ( C)

o

Fig.14 Reverse transfer capacitance; typical values.

VDS =15V.

handbook, halfpage

0

0.2

0.4

0.6

0.8

1

–10

–8

–6

–4

–2

0

Crs

(pF)

V

GS

(V)

MRC134

Fig.15 Input capacitance; typical values.

VDS =15V.

handbook, halfpage

MRC140

0

1

2

3

–10

–8

–6

–4

–2

0

C is

(pF)

V

GS

(V)

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