Datenblatt-Suchmaschine für elektronische Bauteile |
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BF570 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BF570 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Mar 04 2 Philips Semiconductors Product specification NPN medium frequency transistor BF570 FEATURES • Low current (max. 100 mA) • Low voltage (max. 15 V) • Low feedback capacitance (max. 2.2 pF). APPLICATIONS • Monitors • Battery equipped applications. DESCRIPTION NPN transistor in a SOT23 plastic package. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM255 Top view 2 3 1 MARKING TYPE NUMBER MARKING CODE BF570 B26 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V ICM peak collector current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW hFE DC current gain IC = 10 mA; VCE =1V 40 − fT transition frequency IC = 40 mA; VCE = 10 V; f = 100 MHz 490 − MHz |
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Ähnliche Beschreibung - BF570 |
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